MP4412 2002-11-20 1 toshiba power mos fet module silicon n channel mos type (l 2 - -mosv 4 in 1) MP4412 high power, high speed switching applications for printer head pin driver and pulse motor driver for solenoid driver 4 v gate drive available small package by full molding (sip 12 pin) high drain power dissipation (4 devices operation) : p t = 28 w (tc = 25c) low drain-source on resistance: r ds (on) = 0.17 ? (typ.) high forward transfer admittance: |y fs | = 4.5 s (typ.) low leakage current: i gss = 10 a (max) (v gs = 16 v) i dss = 100 a (max) (v ds = 100 v) enhancement-mode: v th = 0.8 to 2.0 v (v ds = 10 v, i d = 1 ma) maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 100 v drain-gate voltage (r gs = 20 k ? ) v dgr 100 v gate-source voltage v gss 20 v dc i d 5 drain current pulse i dp 20 a drain power dissipation (1 device operation, ta = 25c) p d 2.2 w ta = 25c 4.4 drain power dissipation (4 devices operation) tc = 25c p dt 28 w single pulse avalanche energy (note 1) e as 180 mj avalanche current i ar 5 a 1 device operation e ar 0.22 repetitive avalanche energy (note 2) 4 device operation e art 0.44 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note 1: avalanche energy (single pulse) applied condition v dd = 25 v, starting t ch = 25c, l = 11.6 mh, r g = 25 ? , i ar = 5 a note 2: repetitive rating; pulse width limited by maximum channel temperature. this transistor is an electrostatic sensitive device. please handle with caution. industrial applications unit: mm jedec D jeita D toshiba 2-32c1d weight: 3.9 g (typ.)
MP4412 2002-11-20 2 array configuration thermal characteristics characteristics symbol max unit thermal resistance of channel to ambient (4 devices operation, ta = 25c) r th (ch-a) 28.4 c/w thermal resistance of channel to case (4 devices operation, tc = 25c) r th (ch-c) 4.46 c/w maximum lead temperature for soldering purposes (3.2 mm from case for t = 10 s) t l 260 c 5 4 2 3 1 6 12 11 9 10 8 7
MP4412 2002-11-20 3 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v D D 10 a drain cut-off current i dss v ds = 100 v, v gs = 0 v D D 100 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 100 D D v gate threshold voltage v th v ds = 10 v, i d = 1 ma 0.8 D 2.0 v v gs = 4 v, i d = 2.5 a D 0.22 0.30 drain-source on resistance r ds (on) v gs = 10 v, i d = 2.5 a D 0.17 0.23 ? forward transfer admittance |y fs | v ds = 10 v, i d = 2.5 a 2.0 4.5 D s input capacitance c iss D 500 D pf reverse transfer capacitance c rss D 80 D pf output capacitance c oss v ds = 10 v, v gs = 0 v f = 1 mhz D 190 D pf rise time t r D 17 D turn-on time t on D 25 D fall time t f D 50 D switching time turn-off time t off v in : t r , t f < 5 ns, duty 1%, t w = 10 s D 195 D s total gate charge (gate-source plus gate-drain) q g D 22 D nc gate-source charge q gs D 15 D nc gate-drain (?miller?) charge q gd v dd 80 v, v gs = 10 v i d = 5 a D 7 D nc source-drain diode ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current i dr D D D 5 a pulse drain reverse current i drp D D D 20 a diode forward voltage v dsf i dr = 5 a, v gs = 0 v D D ? 1.7 v reverse recovery time t rr D 160 D ns reverse recovery charge q rr i dr = 5 a, v gs = 0 v di dr /dt = 50 a/s D 0.28 D c flyback-diode rating and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit forward current i fm D D D 5 a reverse current i r v r = 100 a D D 0.4 a reverse voltage v r i r = 100 a 100 D D v forward voltage v f i f = 2 a D D 2.3 v 10 v v gs r l = 20 ? v dd 50 v i d = 2.5 a v out 50 ? 0 v
MP4412 2002-11-20 4 marking product no. m p 4 4 1 2 lot code japan toshiba trademark country of origin lot number month (starting from alphabet a) year (last number of the christian era)
MP4412 2002-11-20 5 drain current i d (a) |y fs | ? i d forward transfer admittance |y fs | (s) drain current i d (a) r ds (on) ? i d drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) gate-source voltage v gs (v) i d ? v gs drain current i d (a) gate-source voltage v gs (v) v ds ? v gs drain-source voltage v ds (v) drain-source on resistance r ds (on) ( ? ) 0 0 common source tc = 25c 1 2 3 4 5 0.2 0.4 0.6 0.8 1.0 3 v gs = 2.0 v 2.6 2.8 5 3.5 4 2.4 6 8 10 0 0 common source v ds = 10 v 100 25 tc = ? 55c 2 4 6 8 10 1 2 3 4 5 0 0 common source tc = 25c i d = 5 a 2.5 1.3 0.4 0.8 1.2 1.6 2.0 4 8 12 16 20 0.3 0.03 0.05 0.1 0.3 1.0 0.5 1 3 5 10 30 common source tc = 2 5 c v gs = 4 v 10 0.5 0 0 common source tc = 25c 2 4 6 8 10 2 4 6 8 10 3.5 v gs = 2.5 v 3 3.25 5 3.75 4 2.75 6 8 10 0.3 1 100 25 tc = ? 55c common source v ds = 10 v 3 5 10 30 50 0.5 1 3 5 10 30
MP4412 2002-11-20 6 case temperature tc (c) r ds (on) ? tc drain-source on resistance r ds (on) ( ? ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) case temperature tc (c) v th ? tc gate threshold voltage v th (v) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) gate-source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source voltage v ds (v) drain-source voltage v ds (v) safe operating area drain current i d (a) common source v gs = 0 v f = 1 mhz tc = 25c 10 0.1 0.3 0.5 1 3 5 10 30 50 100 30 50 100 300 500 1000 3000 c iss c oss c rss 0 0 0 common source i d = 5 a tc = 25c 8 16 24 32 20 40 60 80 4 8 12 16 v dd = 80 v 20 40 v ds v gs 0 ? 80 common source v ds = 10 v i d = 1 ma ? 40 0 40 80 120 160 1 2 3 4 5 0.1 1 100 s* 10 ms* 1 ms* i d max 100 ms* 3 10 30 100 300 0.3 1 3 10 30 *: single nonrepetitive pulse tc = 2 5 c curves must be derated linearly with increase in temperature. i dp max 0 ? 80 ? 40 0 40 80 120 160 0.1 0.2 0.3 0.4 0.5 v gs = 4 v 10 v 1.3 i d = 5 a 1.3 2.5 2.5 i d = 5 a common source common source tc = 25c 0.1 0 ? 0.4 ? 0.8 ? 1.2 ? 1.6 ? 2.0 0.3 0.5 1 3 5 10 30 v gs = 0, ? 1 v 10 3 1
MP4412 2002-11-20 7 r th ? t w transient thermal resistance r th (c/w) ambient temperature ta (c) p dt ? ta total power dissipation p dt (w) ? t ch ? p dt channel temperature increase ? t ch (c) channel temperature t ch (c) e as ? t ch avalanche energy e as (mj) total power dissipation p dt (w) pulse width t w (s) 0 8 40 2 4 6 80 120 160 200 0 (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation attached on a circuit board circuit board (4) (3) (2) (1) attached on a circuit board (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 2 4 6 8 0 160 40 80 120 10 0 circuit board (1) (2) (3) (4) 0.001 0.01 0.1 1 10 100 1000 curves should be applied in thermal limited area. (single nonrepetitive pulse) below figure show thermal resistance per 1 unit versus pulse width. -no heat sink and attached on a circuit board- (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation circuit board (1) (2) (3) (4) 0.3 1 3 10 30 100 300 0 25 40 80 120 160 200 50 75 100 125 150 test circuit test wave form i ar b vdss v dd v ds peak i ar = 5 a, r g = 25 ? v dd = 25 v, l = 11.6 mh ? 15 v 15 v dd vdss vdss 2 as v b b li 2 1
MP4412 2002-11-20 8 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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